UnitedSiC

SiC FETs

UJ3C, UF3C, UF3SC
High-Performance SiC FETs
SiC FETs
DESCRIPTION
The UnitedSiC UJ3C, UF3C and UF3SC series of silicon carbide FETs are based on a unique cascode configuration, where a high performance SiC fast JFET is co-packaged with a cascode optimized Si-MOSFET to produce the only standard gate drive SiC device in the market today. The UJ3C series is built for “ease of use” and the perfect solution when upgrading from an existing silicon-based device. The UF3C & UF3SC series provides faster switching speed and lower switching losses, and available in standard thru-hole (including Kelvin) and surface mount package options.

FEATURES
  • 650V to 1700V
  • Low RDS(on) options from 7mohm to 410mohm
  • Excellent body diode performance (Vf < 2V)
  • Drive with any Si and/or SiC gate drive voltage
  • Superior thermal performance
  • Full suite of Kelvin and industry standard packages 

*UnitedSiC Authorized Distributor
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