Silicon Carbide Power Module

BSMXXXX series
Full SiC power modules maximize high-speed performance. The result is significantly reduced switching loss compared with conventional Si IGBTs.
Silicon Carbide Power Module
An original electric field mitigation structure, along with a novel screening method, are utilized to maintain reliability and enable the development of the first mass production system for Full-SiC power modules. These new modules integrate SiC SBDs and MOSFETs, making high frequency operation above 100kHz possible (unlike conventional products).

●High-speed switching
●Low switching loss
●High-speed recovery
●Low inductance design

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