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UF4C/SC 1200V Gen 4 SiC FETs
Gen 4 SiC FETs provide designers with the industry's best performance and multiple device options, enabling more design flexibility that delivers the optimum cost-efficient power design.
Based on a unique cascode configuration, the UF4C/SC Gen 4 SiC FET series is rated at 1200V and delivers industry-best performance Figures of Merit across RDS(on) x A, RDS(on) x Coss,tr and RDS(on) x Qg, making them the optimal power solution for mainstream 800V bus architectures. Excellent reliability, based on well-managed thermal performance of the UF4C/SC series, is a result of an advanced silver-sinter die attach and advanced wafer-thinning processing. These devices can be safely driven with standard 0V to 12V or 15V gate drive voltage. Good threshold noise margin is maintained with a true 5V threshold voltage and, like previous generations, these new SiC FETs can be operated from all the typical Si IGBT, Si MOSFET and SiC MOSFET drive voltages. They also include a built-in ESD gate protection clamp.
Industry Lowest RDS(on)From 6mΩ to 60mΩ 750V rated RDS(on) in industry-standard packages
Superior PerformanceIndustry-best Figures of Merit for RDS(on) x Area, RDS(on) x Coss,tr and RDS(on) x Eoss
800V Bus Applications1200V devices from 23mΩ to 70mΩ ideal for 00V bus applications.
Design FlexibilityOptimize for efficiency, thermal management complexity and cost
- 1200V VDS rating
- Low RDS(on) from 23mΩ to 70mΩ
- Best-in-class Figures of Merit (FoM)
- RDS x Area
- RDS(on) x Coss,tr
- RDS(on) x Eoss
- RDS(on) x Qg
- Safely driven with standard 0V to 12V or 15V gate drive voltage
- Excellent threshold noise margin maintained with true 5V threshold voltage
- Operates with all Si IGBT, Si MOSFET and SiC MOSFET drive voltages
- Built-in ESD gate protection clamp
- Industry-standard TO-247-3L and TO-247-4L (Kelvin) packages
|Voltage||RDS(on) (mΩ) @ 25°C||RDS(on) (mΩ) @ 125°C||TO-247-3L||TO-247-4L|
*UnitedSiC Authorized Distributor